Periodically aligned Si nanopillar (PASiNP) arrays were fabricated on Si substrate via a silver-catalyzed chemical etching process using the diameter-reduced polystyrene spheres as mask. The typical sub-wavelength structure of PASiNP arrays had excellent antireflection property with a low reflection loss of 2.84% for incident light within the wavelength range of 200–1,000 nm. The solar cell incorporated with the PASiNP arrays exhibited a power conversion efficiency (PCE) of ~9.24% with a short circuit current density (JSC) of ~29.5 mA/cm2 without using any extra surface passivation technique. The high PCE of PASiNP array-based solar cell was attributed to the excellent antireflection property of the special periodical Si nanostructure.
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机译：使用缩径聚苯乙烯球作为掩膜，通过银催化化学刻蚀工艺在Si基板上制作了周期性排列的Si纳米柱（PASiNP）阵列。 PASiNP阵列的典型亚波长结构具有出色的抗反射性能，对于200–1,000 nm波长范围内的入射光，反射损耗低至2.84％。集成有PASiNP阵列的太阳能电池在不使用任何额外的表面钝化技术的情况下，其功率转换效率（PCE）为〜9.24％，短路电流密度（JSC）为〜29.5 mA / cm2。 PASiNP阵列太阳能电池的高PCE归因于特殊周期性Si纳米结构的优异抗反射性能。
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